activity
20142025
most citedOn the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

366 citations · 617 across the 9 of their papers we have counts for

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Showing 2022Show all

1 paper · 1 filter

physics.app-ph2022★ 36 cited

Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices

Dominic Waldhoer, Christian Schleich, Jakob Michl +9

Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegrap…