1 citations · 1 across the 1 of their papers we have counts for
2 papers
physics.app-ph2020
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…
cond-mat.mes-hall2017★ 1 cited
Ab-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects
Fabian Ducry, Alexandros Emboras, Samuel Andermatt +4
We present atomistic simulations of conductive bridging random access memory (CBRAM) cells from first-principles combining density-functional theory and the Non-equilibrium Green's…