most citedAb-initio Modeling of CBRAM Cells: from Ballistic Transport Properties to Electro-Thermal Effects

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physics.app-ph2020

On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8

Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…