366 citations · 554 across the 9 of their papers we have counts for
9 papers
Efficient Quantum-Mechanical Modeling of Nonradiative Charge Transfer Processes
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +2
Nonradiative charge transfer processes play a central role in a wide range of physical phenomena, including reliability phenomena in semiconductor devices such as bias temperature…
Towards ultra-scaled nanoelectronics using the zipper material system
Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +20
Two-dimensional (2D) materials could overcome the scaling bottleneck of nanoelectronics by enabling atomically thin channels, superior electrostatic control, and reduced short-chan…
Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +19
Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an import…
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…
Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators
Yury Yu. Illarionov, Theresia Knobloch, Burkay Uzlu +11
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequenc…
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
Dominic Waldhoer, Christian Schleich, Jakob Michl +9
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegrap…
Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov +7
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability.…
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…
Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators
Yury Yu. Illarionov, Alexander G. Banshchikov, Dmitry K. Polyushkin +10
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can n…