366 citations · 1.8k across the 53 of their papers we have counts for
4 papers · 1 filter
Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs
Neerav Kharche, Gerhard Klimeck, Dae-Hyun Kim +2
A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device perfor…
Full 3D Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs
SungGeun Kim, Abhijeet Paul, Mathieu Luisier +2
The influence of interface roughness scattering (IRS) on the performances of silicon nanowire field-effect transistors (NWFETs) is numerically investigated using a full 3D quantum…
Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires
Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck
he correct estimation of thermal properties of ultra-scaled CMOS and thermoelectric semiconductor devices demands for accurate phonon modeling in such structures. This work provide…
Atomistic modeling of the phonon dispersion and lattice properties of free-standing <100> Si nanowires
Abhijeet Paul, Mathieu Luisier, Gerhard Klimeck
Phonon dispersions in <100> silicon nanowires (SiNW) are modeled using a Modified Valence Force Field (MVFF) method based on atomistic force constants. The model replicates the bul…