activity
20092026
most citedOn the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices

366 citations · 1.8k across the 53 of their papers we have counts for

collaborators
Showing cond-mat.dis-nnShow all

1 paper · 1 filter

cond-mat.dis-nn2022

An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory

Manasa Kaniselvan, Mathieu Luisier, Marko Mladenović

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field.…