activity
20202022
most citedCovalent 2D CrTe ferromagnet

57 citations · 104 across the 5 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci202246 cited

Dative epitaxy of commensurate monocrystalline covalent-van der Waals moiré supercrystal

Mengying Bian, Liang Zhu, Xiao Wang +17

Realizing van der Waals (vdW) epitaxy in the 80s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional…

physics.chem-ph20211 cited

Dual-Phase MoS And MXene Nanohybrids for Efficient Electrocatalytic Hydrogen Evolution

Sichen Wei, Yu Fu, Huamin Li +1

Molybdenum Disulfide (MoS) has been recognized as a potential substitution of Platinum (Pt) for electrochemical hydrogen evolution reaction (HER). However, the broad adoption o…

cond-mat.mtrl-sci2021

Machine-Learning Enabled Search for The Next-Generation Catalyst for Hydrogen Evolution Reaction

S. Wei, S. Baek, H. Yue +7

The development of active catalysts for hydrogen evolution reaction (HER) made from low-cost materials constitutes a crucial challenge in the utilization of hydrogen energy. Earth-…

cond-mat.mes-hall202157 cited

Covalent 2D CrTe ferromagnet

Mengying Bian, Aleksandr N. Kamenskii, Mengjiao Han +16

To broaden the scope of van der Waals 2D magnets, we report the synthesis and magnetism of covalent 2D magnetic CrTe with a thickness down to one-unit-cell. The 2D CrTe…

cond-mat.mes-hall2020

Two-dimensional Cold Electron Transport for Steep-slope Transistors

Maomao Liu, Hemendra Nath Jaiswal, Simran Shahi +10

Room-temperature Fermi-Dirac electron thermal excitation in conventional three-dimensional (3D) or two-dimensional (2D) semiconductors generates hot electrons with a relatively lon…

physics.app-ph2020

Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride

Hemendra Nath Jaiswal, Maomao Liu, Simran Shahi +13

Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to their metal-semicond…