N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials

Abstract

We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these contacts, we demonstrated a small Schottky barrier height for both carrier polarities. Our finding reveals the potential of a high-performance vdW metal/semiconductor contact for use in electronics applications.

arXiv comment15 pages, 3 figures

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• Crystalline superconductor-semiconductor Josephson junctions for compact superconducting qubits
• Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe${}_2$ heterojunctions
• Designer three-dimensional electronic bands in asymmetric transition metal dichalcogenide heterostructures