125 citations · 384 across the 6 of their papers we have counts for
6 papers
Heat transfer at the van der Waals interface between graphene and NbSe2
Yohta Sata, Rai Moriya, Naoto Yabuki +2
Graphene has been widely used to construct low-resistance van der Waals (vdW) contacts to other two-dimensional (2D) materials. However, a rise of electron temperature of the graph…
N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
Yohta Sata, Rai Moriya, Satoru Masubuchi +3
We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphit…
Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
Yohta Sata, Rai Moriya, Sei Morikawa +3
We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottk…
Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue +4
We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level i…
Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio
Yohta Sata, Rai Moriya, Takehiro Yamaguchi +5
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barr…
Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue +4
Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such de…