Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
arXiv:1507.05188 · doi:10.1063/1.4926973
Abstract
We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications.
17 pages, 4 figures
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Cited by in corpus (4)
- Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
- N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
- Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors
- Detection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interface