Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
arXiv:1408.6942 · doi:10.1063/1.4894256
Abstract
Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 10^5 simultaneously with a large current density of ~10^4 A/cm^2 , thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor
References in corpus (8)
- Van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Imaging Grains and Grain Boundaries in Single-Layer Graphene: An Atomic Patchwork Quilt
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Tuning the graphene work function by electric field effect
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
Cited by in corpus (19)
- Van der Waals heterostructures for high-performance device applications: challenges and opportunities
- Probing Out-of-Plane Charge Transport in Black Phosphorus with Graphene-Contacted Vertical Field-Effect Transistors
- Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
- Graphene-WS heterostructures for tunable spin injection and spin transport
- Gate tunable WSe2/SnSe2 backward diode with ultrahigh reverse rectification ratio
- N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
- Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
- Exploring the Structural Stability, Electronic and Thermal Attributes of synthetic 2D Materials and their Heterostructures
- Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
- Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe Tunnel Field-Effect Transistors
- Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
- Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors
- Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio
- Thickness dependent interlayer transport in vertical MoS2 Josephson junctions
- Heat transfer at the van der Waals interface between graphene and NbSe2
- Multifunctional steep-slope spintronic transistors with spin-gapless-semiconductor or spin-gapped-metal electrodes
- Two-dimensional Janus van der Waals heterojunctions: a review of recent research progresses
- Detection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interface
- Transport gap in vertical devices made of incommensurately misoriented graphene layers