125 citations · 343 across the 5 of their papers we have counts for
5 papers
Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue +4
We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level i…
Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio
Yohta Sata, Rai Moriya, Takehiro Yamaguchi +5
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barr…
Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
Takehiro Yamaguchi, Rai Moriya, Yoshihisa Inoue +5
This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a fe…
Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue +4
Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such de…
Electrical spin injection into graphene through monolayer hexagonal boron nitride
Takehiro Yamaguchi, Yoshihisa Inoue, Satoru Masubuchi +6
We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-B…