Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio

Abstract

Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature dependence of the conductance, the modulation of Schottky barrier height Δϕ has been directly determined. We observed significant MoS2 layer number dependence of Δϕ. Moreover, we demonstrate that the device which shows larger Δϕ exhibits larger current modulation; this is consistent with the fact that the transport of these devices is dominated by graphene/MoS2 Schottky barrier.

arXiv commentProceeding for 2014 International Conference on Solid State Devices and Materials (SSDM2014)

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Cited by in corpus (7)

• Atomically-thin Ohmic Edge Contacts Between Two-dimensional Materials
• Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
• N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
• Absence of a Band Gap at Interface of a Metal and Highly Doped Monolayer $Mo{S}_2$
• Detection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interface
• A back-to-back diode model applied to MoS2 van der Waals Schottky diodes
• Electrical and optical properties of MoS${}_2$,MoO${}_{x=2,3}$(MoSO)/RGO heterostructure