Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Abstract

Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 10^5 simultaneously with a large current density of ~10^4 A/cm^2 , thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor

References in corpus (4)

• Boron nitride substrates for high-quality graphene electronics
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Atomically thin boron nitride: a tunnelling barrier for graphene devices
• Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene

Cited by in corpus (6)

• Graphene-WS${}_2$ heterostructures for tunable spin injection and spin transport
• N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
• Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
• Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
• Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
• Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio