125 citations · 384 across the 6 of their papers we have counts for
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Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
Yohta Sata, Rai Moriya, Sei Morikawa +3
We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottk…
Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
Rai Moriya, Takehiro Yamaguchi, Yoshihisa Inoue +4
We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level i…
Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio
Yohta Sata, Rai Moriya, Takehiro Yamaguchi +5
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barr…