Detection of charge density wave phase transitions at 1T-TaS/GaAs interfaces
arXiv:1704.05938 · doi:10.1063/1.4982964
Abstract
The transition metal dichalcogenide 1T-TaS is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. Here we report on the transport properties and capacitance characteristics of the interface between freshly exfoliated flakes of 1T-TaS in intimate van der Waals contact with \textit{n}-type GaAs substrates. The extracted barrier parameters (ideality, barrier height and built-in potential) experience pronounced changes across the Mott-CDW transition in the 1T-TaS. The CDW-induced changes in barrier properties are well described by a bond polarization model which upon decreasing temperature gives rise to an increased potential drop across the interfacial region due to the localization of carriers and a decreased dielectric constant.
arXiv comment17 Pages, 6 figures, Accepted by Applied Physics Letters
References in corpus (11)
- Gate-tunable Phase Transitions in 1T-TaS
- Ultrafast switching to a stable hidden topologically protected quantum state in an electronic crystal
- Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
- Memristive phase switching in two-dimensional crystals
- Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2
- Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes
- Fast non-thermal switching between macroscopic charge-ordered quantum states induced by charge injection
- Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates
- Interplay of electron-electron and electron-phonon interactions in the low temperature phase of 1T-TaS2
- GaN / VO2 heteroepitaxial p-n junctions: Band offset and minority carrier dynamics
- Magnetodielectric Coupling in Nonmagnetic Au/GaAs:Si Schottky Barriers
Cited by in corpus (3)
- Out-of-plane transport of 1T-TaS2/graphene-based van der Waals heterostructures
- van der Waals heterostructures based on atomically-thin superconductors
- Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe and 2H-NbSe