Xiaochen Zhu

most citedVan der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe

_{2}

and 2H-NbSe

_{2}

10 citations · 10 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.str-el2017★ 10 cited

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe $_{2}$ and 2H-NbSe $_{2}$

Ang J. Li, Xiaochen Zhu, Daniel Rhodes +3

Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe $_{2}$ and 2H-NbSe $_{2}$ , harbor a second order charge density wave (CDW) transition where phonons play a key role…

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe2​ and 2H-NbSe2​

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe $_{2}$ and 2H-NbSe $_{2}$