Xiaochen Zhu

most citedBi-2212/1T-TaS

_{2}

Van der Waals junctions: Interplay of proximity induced high-

T_{c}

superconductivity and CDW order

13 citations · 31 across the 3 of their papers we have counts for

collaborators

Showing cond-mat.str-elShow all

1 paper · 1 filter

cond-mat.str-el2017★ 10 cited

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe $_{2}$ and 2H-NbSe $_{2}$

Ang J. Li, Xiaochen Zhu, Daniel Rhodes +3

Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe $_{2}$ and 2H-NbSe $_{2}$ , harbor a second order charge density wave (CDW) transition where phonons play a key role…

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe2​ and 2H-NbSe2​

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe $_{2}$ and 2H-NbSe $_{2}$