Emergence of Rashba splitting and spin-valley properties in Janus MoGeSiP2As2 and WGeSiP2As2 monolayers

Abstract

First-principles calculations are performed to study the structural stability and spintronics properties of Janus MoGeSiP2As2 and WGeSiP2As2 monolayers. The high cohesive energies and the stable phonon modes confirm that both these structures are experimentally accessible. In contrast to pristine MoSi2P4, the Janus monolayers demonstrate reduced direct bandgaps and large spin-split states at K/-K. In addition, their spin textures exposed that breaking the mirror symmetry brings Rashba-type spin splitting in the systems which can be increased by using higher atomic spin-orbit coupling. The large valley spin splitting together with the Rashba splitting in these Janus monolayer structures can make a remarkable contribution to semiconductor valleytronics and spintronics.

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Cited by in corpus (8)

• Coupled spin-valley, Rashba effect and hidden persistent spin polarization in WSi${}_2$N${}_4$ family
• Manipulation of valley and spin properties in two-dimensional Janus WSiGeZ${}_4$ (Z=N,P, As) through symmetry control
• Switchable large-gap quantum spin Hall state in two-dimensional MSi${}_2$Z${}_4$ materials class
• Correlation-driven topological transition in Janus VSiGeP2As2
• Emergence of Rashba spin valley state in two-dimensional strained bismuth oxychalcogenides Bi${}_2$O${}_2$Se
• Mott-Insulator Ca2RuO4 under a static external electric field
• Quantum anomalous Hall conductivity in altermagnets under applied magnetic field
• Coexistence of Rashba and Dirac dispersions on the surface of centrosymmetric topological insulator decorated with transition metals