456 citations · 1.3k across the 14 of their papers we have counts for
14 papers
Cascadable in-memory computing based on symmetric writing and read out
Lizheng Wang, Junlin Xiong, Bin Cheng +17
The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting a…
Non-locality sharing for a three-qubit system via multilateral sequential measurements
Changliang Ren, Xiaowei Liu, Wenlin Hou +2
Non-locality sharing for a three-qubit system via multilateral sequential measurements was deeply discussed. Different from 2-qubit case, it is shown that non-locality sharing betw…
Temperature-sensitive spatial distribution of defects in PdSe2 flakes
Xiaowei Liu, Yaojia Wang, Qiqi Guo +20
Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and…
Gate-tunable van der Waals heterostructure for reconfigurable neural network vision sensor
Chen-Yu Wang, Shi-Jun Liang, Shuang Wang +18
Early processing of visual information takes place in the human retina. Mimicking neurobiological structures and functionalities of the retina provide a promising pathway to achiev…
Electron irradiation on multilayer PdSe field effect transistors
A. Di Bartolomeo, F. Urban, A. Pelella +4
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical propert…
Field emission in ultrathin PdSe2 back-gated transistors
A. Di Bartolomeo, A. Pelella, F. Urban +5
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type…
Anapole mediated giant photothermal nonlinearity in nanostructured silicon
Tianyue Zhang, Ying Che, Kai Chen +14
Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the na…
Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors
Song Hao, Shengnan Yan, Yang Wang +17
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it…
Direct evidence for charge compensation induced large magnetoresistance in thin WTe2
Yaojia Wang, Lizheng Wang, Xiaowei Liu +9
Since the discovery of extremely large non-saturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under d…
Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu +7
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We…
Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials
Junwen Zeng, Xin He, Shi-Jun Liang +16
Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and the…
Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning
Song Hao, Junwen Zeng, Tao Xu +20
Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications…
Gate-Induced Interfacial Superconductivity in 1T-SnSe2
Junwen Zeng, Erfu Liu, Yajun Fu +16
Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In…
Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping
Yajun Fu, Mingsheng Long, Anyuan Gao +10
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrin…