Magnetoresistance and Quantum Oscillations of an Electrostatically Tuned Semimetal-to-Metal Transition in Ultra-Thin WTe2

Abstract

We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere. At low temperatures, we find that a large magnetoresistance can be turned on and off by electrostatically doping the system between a semimetallic state and an electron-only metallic state, respectively. We confirm the nature of the two regimes by analyzing the magnetoresistance and Hall effect with a two-carrier model, as well as by analysis of Shubnikov-de Haas oscillations, both of which indicate depletion of hole carriers via the electrostatic gate. This confirms that semiclassical transport of two oppositely charged carriers accurately describes the exceptional magnetoresistance observed in this material. Finally, we also find that the magnetoresistance power law is sub-quadratic and density-independent, suggesting new physics specifically in the semimetallic regime.

arXiv comment6 pages, 3 figures

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Cited by in corpus (32)

• Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
• Gate-induced superconductivity in a monolayer topological insulator
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• Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2
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• Direct evidence for charge compensation induced large magnetoresistance in thin WTe2
• Origin of the Extremely Large Magnetoresistance in the Semimetal YSb
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• Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2
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• Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave
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