Magneto-memristive switching in a two-dimensional layer antiferromagnet

Abstract

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing for electrical control of the collective phases. Here, we report the observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI${}_3$, a natural layer antiferromagnet. The coupling to spin order enables both tuning of the resistance hysteresis by magnetic field, and electric-field switching of magnetization even in multilayer samples.

References in corpus (17)

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• Spin Transfer Torques
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• Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3
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• Raman fingerprint of two terahertz spin wave branches in a two-dimensional honeycomb Ising ferromagnet
• Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides
• Valley-selective exciton bistability in a suspended monolayer semiconductor

Cited by in corpus (5)

• Electrical control of magnetism by electric field and current-induced torques
• Tunable layered-magnetism-assisted magneto-Raman effect in a two-dimensional magnet $\mathrm{Cr}{\mathrm{I}}_3$
• Growth of high-quality CrI3 single crystals and engineering of its magnetic properties via V and Mn doping
• Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few-layer CrPS4
• NiSi: New venue for antiferromagnetic spintronics