activity
20182020
most citedDesign of van der Waals Interfaces for Broad-Spectrum Optoelectronics

161 citations · 452 across the 4 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2020

Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures

Abigail J. Graham, Johanna Zultak, Matthew J. Hamer +13

In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices…

cond-mat.mes-hall2019127 cited

Composite super-moiré lattices in double aligned graphene heterostructures

Zihao Wang, Yi Bo Wang, J. Yin +23

When two-dimensional atomic crystals are brought into close proximity to form a van der Waals heterostructure, neighbouring crystals can start influencing each others electronic pr…

cond-mat.mes-hall2019161 cited

Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics

Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak +14

Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into int…

cond-mat.mes-hall2019

Atomic reconstruction in twisted bilayers of transition metal dichalcogenides

Astrid Weston, Yichao Zou, Vladimir Enaldiev +17

Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids w…

cond-mat.mes-hall201962 cited

Ultra-thin van der Waals crystals as semiconductor quantum wells

Johanna Zultak, Samuel Magorrian, Maciej Koperski +11

Control over the electronic spectrum at low energy is at the heart of the functioning of modern advanced electronics: high electron mobility transistors, semiconductor and Capasso…

cond-mat.mtrl-sci2019102 cited

Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES

Matthew Hamer, Johanna Zultak, Anastasia V. Tyurnina +16

Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of the…