Semimetallic features in quantum transport through a gate-defined point contact in bilayer graphene

Abstract

We demonstrate that, at the onset of conduction, an electrostatically defined quantum wire in bilayer graphene (BLG) with an interlayer asymmetry gap may act as a 1D semimetal, due to the multiple minivalley dispersion of its lowest subband. Formation of a non-monotonic subband coincides with a near-degeneracy between the bottom edges of the lowest two subbands in the wire spectrum, suggesting an $8e^2/h$ step at the conduction threshold, and the semimetallic behaviour of the lowest subband in the wire would be manifest as resonance transmission peaks on an $8e^2/h$ conductance plateau.

arXiv comment9 pages, 8 figures (including appendices)

References in corpus (15)

• Landau level degeneracy and quantum Hall effect in a graphite bilayer
• Single-shot read-out of an individual electron spin in a quantum dot
• The recursive Green's function method for graphene
• Electrostatically induced quantum point contact in bilayer graphene
• Scalable Tight-Binding Model for Graphene
• Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system
• Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene
• Quantized conductance and large g-factor anisotropy in InSb quantum point contacts
• Topologically non-trivial valley states in bilayer graphene quantum point contacts
• Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene
• Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
• Valley subband splitting in bilayer graphene quantum point contact
• Scaling approach to tight-binding transport in realistic graphene devices: the case of transverse magnetic focusing
• Electron flow in split-gated bilayer graphene
• Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure

Cited by in corpus (4)

• Coherent Jetting behind a gate-defined Channel in Bilayer Graphene
• Gate-tunable regular and chaotic electron dynamics in ballistic bilayer graphene cavities
• Specular electron focusing between gate-defined quantum point contacts in bilayer graphene
• A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene