Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers

Abstract

III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.

6 pages, 5 figures

References in corpus (6)

• The Raman Fingerprint of Graphene
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
• Rayleigh Imaging of Graphene and Graphene Layers
• Indirect to direct gap crossover in two-dimensional InSe revealed by ARPES
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Cited by in corpus (4)

• Shear and breathing modes of layered materials
• Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
• Layer-dependent optically-induced spin polarization in InSe
• Unveiling the growth mode diagram of GaSe on sapphire