Two-Dimensional Transition Metal Dichalcogenides-Based Counter Electrodes for Dye-Sensitized Solar Cells
arXiv:1703.04084
Abstract
Dye-sensitized solar cells (DSSCs) are gaining considerable interest as alternatives to the semiconductor-based thin film solar cells. The noble metal platinum (Pt) is conventionally used as counter electrode (CE) material for fabricating DSSCs. Since Pt is expensive and scarce, new materials have been explored to develop cost-effective Pt-free counter electrodes for DSSCs. Two-dimensional (2D) graphene-based counter electrodes have achieved the highest known power conversion efficiency (η) of 13%, which has stimulated research activities in 2D layered transition metal dichalcogenides (TMDs) for developing Pt-free DSSCs. In this review, progress made on alternative counter electrodes for fabricating low-cost Pt-free DSSCs, based on earth-abundant 2D TMDs including MoS2, WS2, TiS2, FeS2, CoS2, NiS2, SnS2, MoSe2, NbSe2, TaSe2, NiSe2, FeSe2, CoSe2, Bi2Se3 and their based composites, are discussed and summarized. Also, the considerable progress made on thin films of MoS2 and MoS2 based carbon, graphene, carbon nanotubes (CNTs), carbon nanofibers (CNFs), and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) composites as efficient counter electrodes (CEs) for DSSCs are discussed, in terms of their electrochemical and photovoltaic properties. At present, PCE values higher than that of standard Pt CE have been recorded for a number of TMD-based CEs, which include MoS2 and MoSe2/thin films deposited on Mo foil, MoS2/CNTs, MoS2/graphene, MoS2/carbon, MoSe2/PEDOT:PSS, NbSe2, FeS2, FeSe2 nanosheets, TiS2/graphene, and NiS2/graphene hybrid systems in DSSCs, for the reduction of triiodide (I3-) to iodide (I-). The highest PCE (η=10.46%) versus Pt CE (η=8.25%) at 1 Sun (100 mW/cm2, AM 1.5G) was measured for DSSCs having a low cost and flexible CoSe2/carbon-nanoclimbing wall counter electrode deposited on a nickel foam.
arXiv comment163 pages, 32 figures, 4 tables
References in corpus (15)
- Two Dimensional Atomic Crystals
- Van der Waals heterostructures
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- Integrated Circuits Based on Bilayer MoS2 Transistors
- Band alignment of two-dimensional transition metal dichalcogenides: application in tunnel field effect transistors
- Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2
- Helicity resolved Raman scattering of MoS2, MoSe2, WS2 and WSe2 atomic layers
- Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
- Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence
- Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging
- MoS2 Transistors Operating at Gigahertz Frequencies
- Raman Signatures of Polytypism in Molybdenum Disulfide
- Electronic and optical properties of FeSe2 polymorphs: solar cell absorber