781 citations · 1.4k across the 5 of their papers we have counts for
5 papers
The role of spin-orbit coupling in the electronic structure of IrO
Pranab Kumar Das, Jagoda Sławińska, Ivana Vobornik +15
The delicate interplay of electronic charge, spin, and orbital degrees of freedom is in the heart of many novel phenomena across the transition metal oxide family. Here, by combini…
Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors
Erfu Liu, Yajun Fu, Yaojia Wang +20
Semiconducting two-dimensional (2D) transition metal dichalcogenides (TMDs) are emerging as top candidates for post-silicon electronics. While most of 2D TMDs exhibit isotropic beh…
Electrical Transport Properties of Single-Layer WS2
Dmitry Ovchinnikov, Adrien Allain, Ying-Sheng Huang +2
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We fi…
Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity
Yung-Chang Lin, Dumitru O. Dumcenco, Hannu-Pekka Komsa +4
The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms…
Atomic mechanism of phase transition between metallic and semiconducting MoS2 single-layers
Yung-Chang Lin, Dumitru O. Dumcenco, Ying-Sheng Huang +1
Structural transformation between metallic (1T) and semiconducting (2H) phases of single-layered MoS2 was systematically investigated by an in situ STEM with atomic precision. The…