156 citations · 692 across the 12 of their papers we have counts for
12 papers
Catalyst-Free Growth of Atomically-thin Bi2O2Se Nanoribbons for High-performance Electronics and Optoelectronics
Usman Khan, Lei Tang, Baofu Ding +6
One-dimensional (1D) materials have attracted significant research interest due to their unique quantum confinement effects and edge-related properties. Atomically thin 1D nanoribb…
Doping Concentration Modulation in Vanadium Doped Monolayer Molybdenum Disulfide for Synaptic Transistors
Jingyun Zou, Zhengyang Cai, Yongjue Lai +7
Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with new functionalities. However, wide-range control of the substitut…
High-Fidelity Transfer of 2D Bismuth Oxyselenide and its Mechanical Properties
Wenjun Chen, Usman Khan, Simin Feng +3
Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) with high electron mobility is advantageous in future high-performance and flexible electronic and optoelectronic devices. Howeve…
Synthesis of ultrahigh-quality monolayer molybdenum disulfide through in-situ defect healing with thiol molecules
Simin Feng, Junyang Tan, Shilong Zhao +7
Monolayer transition metal dichalcogenides (TMDCs) are two-dimensional (2D) materials with many potential applications. Chemical vapour deposition (CVD) is a promising method to sy…
High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties
Mingqiang Liu, Simin Feng, Yi Hou +5
Black phosphorus (BP) has recently attracted significant interest due to its unique electronic and optical properties. Doping is an effective strategy to tune a material's electron…
Vertical CVD Growth of Highly Uniform Transition Metal Dichalcogenides
Lei Tang, Tao Li, Yuting Luo +5
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics a…
Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides
Zhengyang Cai, Yongjue Lai, Shilong Zhao +8
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDC…
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg +11
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous r…
Zone-center phonons of bulk, few-layer, and monolayer 1T-TaS: Detection of the commensurate charge density wave phase through Raman scattering
Oliver R. Albertini, Rui Zhao, Rebecca L. McCann +5
We present first-principles calculations of the vibrational properties of the transition metal dichalcogenide 1T-TaS for various thicknesses in the high-temperature (undistorte…
Metal to insulator quantum-phase transition in few-layered ReS
Nihar R. Pradhan, Amber McCreary, Daniel Rhodes +11
In ReS a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS crystallizes in the 1T-structure which l…
Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
Junjie Wang, Daniel Rhodes, Simin Feng +7
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides…
Hall and field-effect mobilities in few layered -WSe field-effect transistors
N. R. Pradhan, D. Rhodes, S. Memaran +9
Here, we present a temperature () dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe exfoliated onto SiO.…