Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg +11

We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous r…