156 citations · 692 across the 12 of their papers we have counts for
4 papers · 1 filter
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg +11
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous r…
Metal to insulator quantum-phase transition in few-layered ReS
Nihar R. Pradhan, Amber McCreary, Daniel Rhodes +11
In ReS a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS crystallizes in the 1T-structure which l…
Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
Junjie Wang, Daniel Rhodes, Simin Feng +7
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides…
Hall and field-effect mobilities in few layered -WSe field-effect transistors
N. R. Pradhan, D. Rhodes, S. Memaran +9
Here, we present a temperature () dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe exfoliated onto SiO.…