Imaging microscopic electronic contrasts at the interface of single-layer WS with oxide and boron nitride substrates
arXiv:1903.10400 · doi:10.1063/1.5088968
Abstract
The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS stacked on hBN, SiO and TiO substrates. Using work function and X-ray absorption imaging we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic band gaps and electron affinities from the measured valence band offsets of WS and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials.
arXiv comment5 pages, 5 figures, 1 table
References in corpus (13)
- Boron nitride substrates for high-quality graphene electronics
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- Mixed-Dimensional van der Waals Heterostructures
- The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- Huge excitonic effects in layered hexagonal boron nitride
- Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
- Graphene bubbles on a substrate : Universal shape and van der Waals pressure
- Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence
- Giant spin-splitting and gap renormalization driven by trions in single-layer WS/h-BN heterostructures
- Spatially Resolved Electronic Properties of Single-Layer WS on Transition Metal Oxides
- Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride
- Destroying coherence in high temperature superconductors with current flow
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- Accessing the spectral function of in operando devices by angle-resolved photoemission spectroscopy
- Spectral functions of CVD grown MoS monolayers after chemical transfer onto Au surface
- Visualizing band structure hybridization and superlattice effects in twisted MoS/WS heterobilayers
- Ultrafast nano-imaging of dark excitons