Electron and thermal transport via Variable Range Hopping in MoSe${}_2$ single crystals

Abstract

Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current in-plane (CIP) and current perpendicular to plane (CPP) as a function of temperature. The CIP measurements exhibit metal to semiconductor transition at $\simeq 31$ K. In the semiconducting phase ($T>31$ K), the transport is best explained by variable range hopping (VRH) model. Large magnitude of resistivity in CPP mode indicates strong structural anisotropy. Seebeck coefficient as a function of temperature measured in the range $90-300$ K, also agrees well with the VRH model. The room temperature Seebeck coefficient is found to be $139$ $\mu$V/K. VRH fittings of the resistivity and Seebeck coefficient data indicate high degree of localization.

11 pages, 3 figures

References in corpus (7)

• Titanic Magnetoresistance in WTe2
• Electrical Transport Properties of Single-Layer WS2
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Nature of the superconductor-insulator transition in disordered superconductors
• Pressure induced metallization with absence of structural transition in layered MoSe2
• Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2
• Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

Cited by in corpus (1)

• Thermoelectricity near Anderson localization transitions