Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition

Abstract

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity.

References in corpus (6)

• Localization of preformed Cooper-pairs in disordered superconductors
• Nature of the superconductor-insulator transition in disordered superconductors
• Localized Superconductivity in the Quantum-Critical Region of the Disorder-Driven Superconductor-Insulator Transition in TiN Thin Films
• Compositional disorder and tranport peculiarities in the amorphous indium-oxides
• Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition
• Coulomb gap triptychs, $\sqrt{2}$ effective charge, and hopping transport in periodic arrays of superconductor grains

Cited by in corpus (5)

• Electron and thermal transport via Variable Range Hopping in MoSe${}_2$ single crystals
• Nonintrinsic origin of the magnetic-field-induced metal-insulator and electronic phase transitions in graphite
• Structural dynamics in thermal-treatment of amorphous indium-oxide films
• Vortex Variable Range Hopping in a Conventional Superconducting Film
• On the relation between disorder and homogeneity in an amorphous metal