867 citations · 1.3k across the 10 of their papers we have counts for
10 papers
Quantum noise limited microwave amplification using a graphene Josephson junction
Joydip Sarkar, Kishor V. Salunkhe, Supriya Mandal +7
Josephson junctions (JJ) and their tunable properties, including their nonlinearities, form the core of superconducting circuit quantum electrodynamics (cQED). In quantum circuits,…
Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals
Biswajit Datta, Jaykumar Vaidya, Subhamoy Ghatak +5
We report on the fabrication of nano-devices on the \hkl[-1 0 1] surface of a Weyl semimetal, a macroscopic crystal of TaAs, and low-temperature transport measurements. We can impl…
Anomalous Fraunhofer patterns in gated Josephson junctions based on the bulk-insulating topological insulator BiSbTeSe2
Subhamoy Ghatak, Oliver Breunig, Fan Yang +3
One-dimensional Majorana modes are predicated to form in Josephson junctions based on three-dimensional topological insulators (TIs). While observations of supercurrents in Josephs…
Current crowding mediated large contact noise in graphene field-effect transistors
Paritosh Karnatak, T. Phanindra Sai, Srijit Goswami +3
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effe…
Switching of Charge-Current-Induced Spin Polarization in the Topological Insulator BiSbTeSe2
Fan Yang, Subhamoy Ghatak, A. A. Taskin +7
The charge-current-induced spin polarization is a key property of topological insulators for their applications in spintronics. However, topological surface states are expected to…
Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
Tathagata Paul, Subhamoy Ghatak, Arindam Ghosh
We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been…
Microscopic Origin of Charged Impurity Scattering and Flicker Noise in MoS2 field-effect Transistors
Subhamoy Ghatak, Sumanta Mukherjee, Manish Jain +2
Scattering of charge carriers and flicker noise in electrical transport are the central performance limiting factors in electronic devices, but their microscopic origin in molybden…
Trap-assisted space charge limited transport in short channel MoS2 transistor
Subhamoy Ghatak, Arindam Ghosh
We present temperature dependent measurements of short channel MoS field effect devices at high source-drain bias. We find that although the characteristics are Ohm…
The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Subhamoy Ghatak, Atindra Nath Pal, Arindam Ghosh
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliate…
1/f noise as a probe for investigating band structure in graphene
Atindra Nath Pal, Subhamoy Ghatak, Vidya Kochat +4
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, t…