High Thermoelectric Powerfactor in Single and Few-Layer MoS${}_2$

Abstract

The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity, while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric powerfactor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to high powerfactor due to the unique density of states (DOS) of confined electrons and holes. 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects, but especially due to their large effective masses and valley degeneracies. Here we report a powerfactor of $Mo{S}_2$ as large as $8.5mW{m}^{-1}{K}^{-2}$ at room temperature, which is amongst the highest measured in traditional, gapped thermoelectric materials. To obtain these high powerfactors, we perform thermoelectric measurements on few-layer $Mo{S}_2$ in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, which result in a large Seebeck coefficient. The demonstrated high, electronically modulated powerfactor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.

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Cited by in corpus (26)

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• Review on thermoelectric properties of transition metal dichalcogenides
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• Reduced Thermal Conductivity of Supported and Encased Monolayer and Bilayer MoS${}_2$
• Photoresponse of atomically thin MoS2 layers and their planar heterojunctions
• Anisotropic Thermal Transport in Phase-Transition Layered 2D Alloys WSe2(1-x)Te2x
• Electron Transport and Thermoelectric Performance of Defected Monolayer MoS2
• Strain Driven Anomalous Anisotropic Enhancement in the Thermoelectric Performance of monolayer MoS${}_2$
• Optimal band gap for improved thermoelectric performance of two-dimensional Dirac materials
• Spatiotemporal Mapping of Photocurrent in a Monolayer Semiconductor Using a Diamond Quantum Sensor
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• Lateral transition metal dichalcogenide heterostructures for high efficiency thermoelectric devices
• Synthesis of Ultra-Thin Superionic Cu2Se and New Aspects of the Low-Temperature Crystal Configurations
• Tunability of electrical and thermoelectrical properties of monolayer MoS${}_2$ through oxygen passivation
• High intrinsic $ZT$ in InP${}_3$ monolayer at room temperature
• Electronic structural critique of interesting thermal and optical properties of C${}_{17}$Ge germagraphene
• Synergistic modulation of band structure and phonon transport for higher thermoelectric performance of WSe2
• Thermoelectric optimization and quantum-to-classical crossover in gate-controlled two-dimensional semiconducting nanojunctions
• Investigation and field effect tuning of thermoelectric properties of SnSe2 flakes
• Ultralow lattice thermal conductivity and high thermoelectric performance near room temperature of Janus monolayer HfSSe
• Orbital moiré and quadrupolar triple-q physics in a triangular lattice
• Kondo Impurities in Two Dimensional MoS2 for Achieving Ultrahigh Thermoelectric Powerfactor
• Enhanced thermopower in two-dimensional ruthenium dichalcogenides $Ru{X}_2$ (X = S, Se): a first-principles study
• Generalized deformation potential and machine-learning approaches for electron-phonon coupling and thermoelectric transport in semiconductors
• Phonon-assisted photoluminescence of bilayer MoS${}_2$ from first principles