481 citations · 733 across the 6 of their papers we have counts for
7 papers
Generalized Parity-Time Symmetry Condition for Enhanced Sensor Telemetry
Pai-Yen Chen, Maryam Sakhdari, Mehdi Hajizadegan +4
Wireless sensors based on micro-machined tunable resonators are important in a variety of applications, ranging from medical diagnosis to industrial and environmental monitoring.Th…
Thermally Oxidized Two-dimensional TaS2 as a High-\k{appa} Gate Dielectric for MoS2 Field-Effect Transistors
Bhim Chamlagain, Qingsong Cui, Sagar Paudel +3
We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assemb…
High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Meeghage Madusanka Perera, Ming-Wei Lin, Hsun-Jen Chuang +6
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron…
Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte
Ming-Wei Lin, Lezhang Liu, Qing Lan +6
We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithiu…
Approaching the Intrinsic Bandgap in Suspended High-Mobility Graphene Nanoribbons
Ming-Wei Lin, Cheng Ling, Luis A. Agapito +6
We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 300…