Thermally Oxidized Two-dimensional TaS2 as a High-\k{appa} Gate Dielectric for MoS2 Field-Effect Transistors

Bhim Chamlagain, Qingsong Cui, Sagar Paudel +3

We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assemb…