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most citedHigh Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

481 citations · 733 across the 6 of their papers we have counts for

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cond-mat.mtrl-sci2014★ 481 cited

High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire +7

We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Ou…