From One Electron to One Hole: Quasiparticle Counting in Graphene Quantum Dots Determined by Electrochemical and Plasma Etching

Abstract

Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer accuracy. In this letter we demonstrate graphene-based quantum dots created by using atomic force microscopy (AFM) with tip-assisted electrochemical etching. This lithography technique provides resolution of about 20 nm, which can probably be further improved by employing sharper tips and better humidity control. The behavior of our smallest dots in magnetic field has allowed us to identify the charge neutrality point and distinguish the states with one electron, no charge and one hole left inside the quantum dot.

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• Advanced scanning probe lithography
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• Optical Properties of Graphene Nanoflakes: Shape Matters
• Atomic force microscope nanolithography of graphene: cuts, pseudo-cuts and tip current measurements
• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
• Transport Spectroscopy of a Graphene Quantum Dot Fabricated by Atomic Force Microscope Nanolithography
• Electronic properties of zigzag, armchair and their hybrid quantum dots of graphene and boron-nitride with and without substitution: A DFT study
• Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions
• Graphene quantum dots probed by scanning tunneling spectroscopy and transport spectroscopy after local anodic oxidation