activity
20152022
most citedIntrinsic valley Hall transport in atomically thin MoS2

108 citations · 272 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2022★ 63 cited

Intrinsic nonlinear Hall effect and gate-switchable Berry curvature sliding in twisted bilayer graphene

Meizhen Huang, Zefei Wu, Xu Zhang +8

Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer grap…

cond-mat.mtrl-sci2021★ 51 cited

Bridging the gap between atomically thin semiconductors and metal leads

Xiangbin Cai, Zefei Wu, Xu Han +15

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have…

cond-mat.mes-hall2018★ 108 cited

Intrinsic valley Hall transport in atomically thin MoS2

Zefei Wu, Benjamin T. Zhou, Gui-Bin Liu +10

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were…

cond-mat.mes-hall2017★ 33 cited

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Gen Long, Denis Maryenko, Sergio Pezzini +10

Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation p…

cond-mat.mes-hall2015★ 17 cited

Negative Compressibility in Graphene-terminated Black Phosphorus Heterostructures

Yingying Wu, Xiaolong Chen, Zefei Wu +7

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered mate…