Aharonov-Bohm oscillations in phosphorene quantum rings: mass anisotropy compensation by confinement potential

Abstract

We consider the Aharonov-Bohm (AB) effect on a confined electron ground state in a quantum ring defined electrostatically within the phosphorene monolayer. The strong anisotropy of effective masses in phosphorene quenches ground-state oscillations for a circular ring because of interrupted persistent current circulation around the ring. An elliptic deformation of the confinement potential can compensate for the anisotropy of the effective masses and produce ground-state parity transformations with the AB periodicity. Moreover, a specific ratio of the semiaxes is determined for which the spectrum becomes identical to that of a circular quantum ring and an isotropic effective mass. We identify a generalized angular momentum operator which commutes with the continuum Hamiltonian for the chosen ratio of the semi-axes that closes the avoided crossings of energy levels for states of the same parity and spin. Ground-state oscillations for the two-electron ground state are also discussed.

arXiv commentPRB in print

References in corpus (20)

• Black phosphorus field-effect transistors
• Phosphorene: A New 2D Material with High Carrier Mobility
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
• Spins in few-electron quantum dots
• Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
• Energy spectra of quantum rings
• Quantum Hall Effect in Black Phosphorus Two-dimensional Electron Gas
• Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap
• Quantum Hall Effect in Ultrahigh Mobility Two-dimensional Hole Gas of Black Phosphorus
• Quantum rings for beginners: Energy spectra and persistent currents
• Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
• Toward a realistic description of multilayer black phosphorus: from $GW$ approximation to large-scale tight-binding simulations
• Electronic Structure and the Properties of Phosphorene Systems
• Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors
• Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
• $k\cdot p$ theory for phosphorene: Effective g-factors, Landau levels, and excitons
• Quantum Transport in Ambipolar Few-layer Black Phosphorus
• Phosphorus oxide gate dielectric for black phosphorus field effect transistors
• Electrostatic quantum dot confinement in phosphorene
• Annular confinement for electrons on liquid helium

Cited by in corpus (1)

• Electronic transport and thermoelectric properties of phosphorene nanodisk under an electric field