Phosphorus oxide gate dielectric for black phosphorus field effect transistors

Abstract

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2/Vs in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

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Cited by in corpus (5)

• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Ohmic contact engineering in few-layer black Phosphorus field effect transistors
• Idiosyncratic Approach to Visualize Degradation of Black Phosphorus
• Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus
• Aharonov-Bohm oscillations in phosphorene quantum rings: mass anisotropy compensation by confinement potential