Dual gate black phosphorus velocity modulated transistor

Abstract

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despite the susceptibility of black phosphorus to photo-oxidation, improvements to the electronic quality of black phosphorus devices has culminated in the observation of the quantum Hall effect. In this work, we demonstrate the room temperature operation of a dual gated black phosphorus transistor operating as a velocity modulated transistor, whereby modification of hole density distribution within a black phosphorus quantum well leads to a two-fold modulation of hole mobility. Simultaneous modulation of Schottky barrier resistance leads to a four-fold modulation of transcon- ductance at a fixed hole density. Our work explicitly demonstrates the critical role of charge density distribution upon charge carrier transport within 2D atomic crystals.

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Cited by in corpus (7)

• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Hybrid 2D Black Phosphorus/Polymer Materials: New Platforms for Device Fabrication
• Phosphorus oxide gate dielectric for black phosphorus field effect transistors
• Pseudospin Electronics in Phosphorene Nanoribbons
• Edge and sublayer degrees of freedom for phosphorene nanoribbons with twofold-degenerate edge bands via electric field
• Aharonov-Bohm oscillations of four-probe resistance in topological quantum rings in silicene and bilayer graphene
• Surface Transport and Quantum Hall Effect in Ambipolar Black Phosphorus Double Quantum Wells