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W. Dickerson

3 papers hereh-index 6176 citations8 works total

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author position
  • first author1
  • middle author2

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall3

identity via Semantic Scholar / OpenAlex

most citedPhosphorus oxide gate dielectric for black phosphorus field effect transistors

25 citations · 51 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2018★ 8 cited

Non-Classical Longitudinal Magneto-Resistance in Anisotropic Black Phosphorus

Francesca Telesio, Nicholas Hemsworth, William Dickerson +11

Resistivity measurements of a few-layer black phosphorus (bP) crystal in parallel magnetic fields up to 45 T are reported as a function of the angle between the in-plane field and…

cond-mat.mes-hall2018★ 25 cited

Phosphorus oxide gate dielectric for black phosphorus field effect transistors

W. Dickerson, V. Tayari, I. Fakih +7

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive io…

cond-mat.mes-hall2015★ 18 cited

Dual gate black phosphorus velocity modulated transistor

V. Tayari, N. Hemsworth, O. Cyr-Choinière +3

The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despi…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.