Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Abstract

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronics, thermoelectric power generation and thermal imaging.

arXiv comment5 pages, 4 figures

References in corpus (26)

• Black phosphorus field-effect transistors
• Phosphorene: A New 2D Material with High Carrier Mobility
• High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
• Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
• Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Strain-induced gap modification in black phosphorus
• Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
• Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
• Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
• Electric field effect in ultrathin black phosphorus
• Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus
• Gate-tunable Phase Transitions in 1T-TaS${}_2$
• Photovoltaic effect in few-layer black phosphorus PN junctions defined by local electrostatic gating
• Phosphorene nanoribbons, nanotubes and van der Waals multilayers
• A black phosphorus photo-detector for multispectral, high-resolution imaging
• Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
• Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors
• Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap
• Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
• Pressure-induced Lifshitz transition in black phosphorus
• Charge transport in dual gated bilayer graphene with Corbino geometry
• Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
• Electric-field tunable Dirac semimetal state in phosphorene thin films
• Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance
• Stark-Effect Scattering in Rough Quantum Wells

Cited by in corpus (2)

• Phosphorus oxide gate dielectric for black phosphorus field effect transistors
• Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus