activity
20172023
most citedStrong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material

69 citations · 97 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2023

Perpendicular in-plane negative magnetoresistance in ZrTe5

Ning Ma, Xiao-Bin Qiang, Zhijian Xie +11

The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR)…

cond-mat.mes-hall2023★ 3 cited

Colossal nonreciprocal Hall effect and broadband frequency mixing due to a room temperature nonlinear Hall effect

Lujin Min, Yang Zhang, Zhijian Xie +8

Nonreciprocal (NR) charge transport in quantum materials has attracted enormous interest since it offers an avenue to investigate quantum symmetry related physics and holds many pr…

cond-mat.mes-hall2022★ 69 cited

Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material

Lujin Min, Hengxin Tan, Zhijian Xie +8

Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, prev…

cond-mat.mtrl-sci2021★ 6 cited

Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5

Zhijian Xie, Xinjian Wei, Xiaobin Qiang +9

ZrTe5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this…

cond-mat.mtrl-sci2021★ 19 cited

Electron-electron interactions and weak anti-localization in few-layer ZrTe5 devices

Zhijian Xie, Xinjian Wei, Shimin Cao +5

Much effort has been devoted to the electronic properties of relatively thick ZrTe5 crystals, focusing on their three-dimensional topological effects. Thin ZrTe5 crystals, on the o…

cond-mat.mes-hall2017

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Shi-Li Yan, Zhi-Jian Xie, Jian-Hao Chen +2

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single d…