Phonon-limited carrier mobility in monolayer Black Phosphorous

Abstract

We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field mobility shows weak dependence on density and, at room temperature, falls in the range of 300 - 1000 cm^2/Vs in the armchair direction and 50 - 120 cm^2/Vs in the zig-zag direction with the anisotropy due to an effective mass difference. At high fields, drift velocity is linear with electric field up to 1 - 2 V/micron reaching values of 10^7 cm/s in the armchair direction, unless self-heating effects are included.

6 pages, 7 firgues

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• Integer and Fractional Quantum Hall effect in Ultra-high Quality Few-layer Black Phosphorus Transistors
• Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
• An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors
• Phonon-Driven Electron Scattering and Magnetothermoelectric Effect in Two-Dimensional Tin Selenide