Isotropic conduction and negative photoconduction in ultrathin PtSe${}_2$ films

Abstract

PtSe${}_2$ ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe${}_2$, with p-type conduction, a hole field-effect mobility up to 40 cm2/(Vs) and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe${}_2$ channel conductance is observed under exposure to light. Such negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO${}_2$ and at the Si/SiO${}_2$ interface.

9 pages, 3 figures

References in corpus (4)

• Two dimensional semiconductors with possible high room temperature mobility
• Hysteresis in the transfer characteristics of MoS2 transistors
• Gas dependent hysteresis in MoS${}_2$ field effect transistors
• Ultra-low power threshold for laser induced changes in optical properties of 2D Molybdenum dichalcogenides

Cited by in corpus (3)

• Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
• Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide
• Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors