105 citations · 158 across the 5 of their papers we have counts for
5 papers
Experimental analysis of variability in WS-based devices for hardware security
M. Vatalaro, H. Neill, F. Gity +8
This work investigates the variability of tungsten disulfide (WS)-based devices by experimental characterization in view of possible application in the field of hardware securi…
Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Alessandro Grillo, Enver Faella, Aniello Pelella +6
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental press…
Isotropic conduction and negative photoconduction in ultrathin PtSe films
Francesca Urban, Farzan Gity, Paul K. Hurley +2
PtSe ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white lase…
First principles modeling of defects in the Al_2O_3/In_0.53Ga_0.47As system
Gabriel Greene-Diniz, Kelin J. Kuhn, Paul K. Hurley +1
Density functional theory paired with a first order many-body perturbation theory correction is applied to determine formation energies and charge transition energies for point def…
Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells
Robert J. Young, Lorenzo O. Mereni, Nikolay Petkov +5
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100…