Resistive switching in MoSe${}_2$/BaTiO${}_3$ hybrid structures

Abstract

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO${}_3$ (BTO) and few-layers MoSe${}_2$ are combined in one single structure. The C-V loops reveal the ferroelectric nature of both Al/Si/SiO${}_x$/BTO/Au and Al/Si/SiO${}_x$/MoSe${}_2$/BTO/Au structures and the high quality of the SiO${}_x$/MoSe${}_2$ interface in the Al/Si/SiOx/MoSe${}_2$/Au structure. Al/Si/SiO${}_x$/MoSe${}_2$/BTO/Au hybrid structures show the electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe${}_2$/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with switching ratio of $\approx$10${}^2$ and a stable memory window, which are highly required for memory applications.

References in corpus (1)

• Heterojunction Hybrid Devices from Vapor Phase Grown MoS${}_2$